Conference Articles: High-Volume 0.25

本帖最后由 huangfeihong88 于 2010-1-20 09:28 编辑

High-Volume 0.25 µm AlGaAs/InGaAs E/D pHEMT Process Utilizing Optical Lithography
Presented at the 2009 CS Mantech Conference, Tampa, Florida
Corey Nevers, Andrew T. Ping, Tertius Rivers, Sumir Varma, Fred Pool, Moreen Minkoff, Ed Etzkorn, Otto Berger, May 2009, 4 pages.

TriQuint has developed a 150 mm high-volume 0.25 µm enhancement / depletion (E/D)-mode pseudomorphic highelectron mobility (pHEMT) AlGaAs / InGaAs based transistor process. Released as TQP25, the 0.25 µm gate length target is possible by utilizing a sidewall spacer process and is a hybrid of TQPED (0.5 µm) and the TQP13 (0.13 µm) pHEMT processes from TriQuint. Typical Depletion-FET (DFET) parameters include a 50 GHz unity current gain cut-off frequency (Ft), -900 mV pinchoff voltage, 550 mA/mm Imax (Vgs = 0.9V), 1.0 W- mm on resistance, and a 12 V minimum breakdown voltage. Additionally, the TQP25 process presented here includes a 0.35 µm Enhancement-FET (EFET) not typical at this technology node. Nominal EFET parameters are a 45 GHz Ft, a 300 mV threshold voltage, 1.3 W-mm on-resistance, and a 12 V minimum breakdown voltage. Passive components include two thin film resistor options (50 W/square and 1KW/square), a 0.62 fF/µm2 MIM capacitor and 1 local layer of evaporated interconnect and 1 global planarized plated metal
layer. TQP25 allows designers to create circuits ranging in diverse applications from the cellular band to Ku-band.