Influence of Dielectric Plasma Etch Source for pHEMT Device Performance
Presented at the 2009 CS Mantech Conference, Tampa, Florida
F.S. Pool, Andrew T. Ping, and Michele Wilson, May 2009, 3 pages.
PHEMT device parametric performance was improved by transfer from a transformer coupled plasma source to an RF helicon wave high density plasma source for the oxide dielectric etch prior to ohmic metal deposition. Process stability and uniformity were enhanced leading a higher yielding product with a wider process window. Significant improvement was measured for device parameters such as contact resistance, on resistance, and transconductance. Evaluation of etch source differences were investigated by examining surface damage.
Influence of Dielectric Plasma Etch Source for pHEMT Device Performance: Influence of Dielectric Plasma Etch Source for pHEMT Device Performance.pdf
