A 40 GHz Power Amplifier Using a Low Cost High Volume 0.15 µm Optical Lithography pHEMT Process
Presented at IEEE COMCAS 2009, Tel Aviv, Israel
Ken Mays, October, 2009 5 pages.
A 40 GHz power amplifier is realized with a new 0.15 um optical lithography pHEMT process developed for low-cost microwave and millimeter wave circuits. Several Ka and V Band market requirements have driven demand for higher bandwidth, low-cost, integrated circuits. A 40 GHz power amplifier is used to demonstrate the process capabilities, starting from the initial design phase and culminating with the fabrication and measurement of the solid state power amplifier.
Conference Articles: abbr_1ffdd31834aff419f81243bf799435d4.pdf
