A MONOLITHIC HIGH POWER Ka BAND PIN SWITCH——ieee论文:Abstract-A high power Ka Band SPDT switch using
monolithic GaAs epitaxial PIN diode technology is pre-
sented. Insertion loss is 0.7 dB at 35GHz, and isolation
is better than 32 dB from 30 to 40GHz. The power han-
dling capability is at least + 38 dBm pulsed and $35 dBm
CW. Switching speed rise and fall times are 2 ns.
A MONOLITHIC HIGH POWER Ka BAND PIN SWITCH——ieee论文: A MONOLITHIC HIGH POWER Ka BAND PIN SWITCH.PDF
